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L6569 Datasheet PDF

Part Series:L6569 Series
Category:FET Drivers
Description:MOSFET Driver 600V 0.275A 2Out Hi/Lo Side Half Brdg Self-Oscillating 8Pin Mini-PDIP
Document:L6569 Datasheet PDF (14 Pages)

L6569 FET Drivers Datasheet PDF

#1
L6569
4.0
ST Microelectronics
#2
L6569AD
3.2
ST Microelectronics
#3
L6569D
2.4
ST Microelectronics
#4
L6569A
3.7
ST Microelectronics

L6569 Datasheet PDF FET Drivers

13 Pages
ST Microelectronics
MOSFET DRVR 600V 0.275A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SO T/R
13 Pages
ST Microelectronics
MOSFET DRVR 600V 0.275A 2Out Hi/Lo Side Half Brdg Inv/Non-Inv 8Pin SO N T/R

L6569 - ST Microelectronics Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
0.2 MHz
Number of Pins
8 Pin
Supply Voltage (DC)
16.6V (max)
Case/Package
DIP-8
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L6569 - ST Microelectronics Function Overview

DESCRIPTION
The device is a high voltage half bridge driver with built in oscillator. The frequency of the oscillator can be programmed using external resistor and capacitor. The internal circuitry of the device allows it to be driven also by external logic signal.
The output drivers are designed to drive external n channel power MOSFET and IGBT. The internal logic assures a dead time [typ. 1.25µs] to avoid cross conduction of the power devices.
Two version are available: L6569 and L6569A. They differ in the low voltage gate driver start up sequence.
■ HIGH VOLTAGE RAIL UP TO 600V
■ BCD OFF LINE TECHNOLOGY
■ INTERNAL BOOTSTRAP DIODE STRUCTURE
■ 15.6V ZENER CLAMP ON VS
■ DRIVER CURRENT CAPABILITY:
   - SINK CURRENT = 270mA
   - SOURCE CURRENT = 170mA
■ VERY LOW START UP CURRENT: 150µA
■ UNDER VOLTAGE LOCKOUT WITH HYSTERESIS
■ PROGRAMMABLE OSCILLATOR FREQUENCY
■ DEAD TIME 1.25µs
■ dV/dt IMMUNITY UP TO ±50V/ns
■ ESD PROTECTION
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