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LM2907 Datasheet PDF

Part Series:LM2907 Series
Category:Semiconductors & Actives
Description:TEXAS INSTRUMENTS LM2907N-8/NOPB Voltage to Frequency Converter, 10kHz, 0.3%, 28V, DIP, 8Pins
Document:LM2907MX-8/NOPB Datasheet PDF (39 Pages)

LM2907 Datasheet PDF Semiconductors & Actives

38 Pages
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TEXAS INSTRUMENTS LM2907N-8 Voltage to Frequency Converter, 10kHz, 0.3%, 0V to 28V, DIP, 8Pins
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LM2907N-8/NOPB - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
10 kHz
Number of Pins
8 Pin
Case/Package
DIP-8
Power Rating
1.2 W
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LM2907N-8/NOPB - TI Function Overview

The LM2907N-8/NOPB is a Frequency to Voltage Converter with a high gain op-amp/comparator designed to operate a relay, lamp or other load when the input frequency reaches or exceeds a selected rate. The tachometer uses a charge pump technique and offers frequency doubling for low ripple, full input protection and its output swings to ground for a zero frequency input. The op-amp/comparator is fully compatible with the tachometer and has a floating transistor as its output. This feature allows either a ground or supply referred load of up to 50mA. The two basic configurations offered include an 8-pin device with an input and an internal connection between the tachometer output and the op-amp non-inverting input. Both of these configurations are available with an active shunt regulator connected across the power leads. The regulator clamps the supply such that stable frequency to voltage and frequency to current operations are possible with supply voltage and a suitable resistor.
Op-amp/comparator has floating transistor output
Frequency doubling for low ripple
Tachometer has built-in hysteresis with either differential input or ground referenced input
Ground referenced tachometer is fully protected from damage due to swings above VCC & below ground
Green product and no Sb/Br
This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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