Part Datasheet Search > Operational Amplifiers(General Purpose) > LPC662 Datasheet PDF
Images are for reference

LPC662 Datasheet PDF

Part Series:LPC662 Series
Category:Operational Amplifiers(General Purpose)
Description:TEXAS INSTRUMENTS LPC662AIM/NOPB Operational Amplifier, Dual, 2 Amplifier, 350kHz, 0.11V/µs, 4.75V to 15.5V, SOIC, 8Pins
Document:LPC662AIM/NOPB Datasheet PDF (97 Pages)

LPC662 Datasheet PDF Operational Amplifiers(General Purpose)

20 Pages
National Semiconductor
IC,Operational Amplifier,DUAL,CMOS,SOP,8Pin,PLASTIC
20 Pages
TI
Low Power CMOS Dual Operational Amplifier 8-SOIC -40℃ to 85℃
20 Pages
National Semiconductor
IC OPAMP GP 350kHz RRO 8SOIC
20 Pages
TI
Low Power CMOS Dual Operational Amplifier 8-SOIC -40℃ to 85℃
20 Pages
National Semiconductor
IC OPAMP GP 350kHz RRO 8SOIC
20 Pages
National Semiconductor
IC OPAMP GP 350kHz RRO 8SOIC
20 Pages
National Semiconductor
IC OPAMP GP 350kHz RRO 8SOIC
20 Pages
National Semiconductor
IC OPAMP GP 350kHz RRO 8SOIC
20 Pages
TI
Operational Amplifiers - Op Amps Low Power CMOS Dual Operational Amplifier 8-SOIC -40℃ to 85℃
20 Pages
TI
OP Amp Dual GP R-R O/P 15.5V 8Pin SOIC Tube
20 Pages
National Semiconductor
OP Amp Dual GP R-R O/P 15.5V 8Pin SOIC N Rail

LPC662AIM/NOPB - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Supply Voltage (DC)
15.0V (max)
Case/Package
SOIC-8
Output Current
22mA @5V
show more

LPC662AIM/NOPB - TI Function Overview

The LPC662AIM/NOPB is a low power CMOS dual Operational Amplifier ideal for operation from a single supply. It features a wide range of operating voltage from +5 to +15V, rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifier in the past are not a problem with this design. Input VOS, drift and broadband noise as well as voltage gain (into 100k and 5k) is all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 0.5mW. This chip is built with national"s advanced double-poly silicon-gate CMOS process.
Input common-mode includes GND
Micropower operation (<0.5mW)
Specified for 100kR and 5kR loads
120dB High voltage gain
3mV Low input offset voltage
1.3µV/°C Low offset voltage drift
2fA Ultra low input bias current
0.01% at 1kHz Low distortion
Green product and no Sb/Br
show more
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.