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MBR1100 Datasheet PDF

Part Series:MBR1100 Series
Category:Rectifier Diodes
Description:Diode Schottky 100V 1A 2Pin DO-41 Bag
Document:MBR1100RLG Datasheet PDF (5 Pages)

MBR1100 Rectifier Diodes Datasheet PDF

MBR1100 Datasheet PDF Rectifier Diodes

5 Pages
International Rectifier
100V 1A Schottky Discrete Diode in a DO-204AL package
4 Pages
ON Semiconductor
Diode Schottky 100V 1A 2Pin DO-41 T/R

MBR1100 - ON Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
2 Pin
Voltage Rating (DC)
100 V
Current Rating
1.00 A
Case/Package
DO-41
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MBR1100 - ON Semiconductor Function Overview

. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features
epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,
high- frequency inverters, free wheeling diodes, and polarity protection diodes.
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard-Ring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• High Surge Capacity
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 1000 per bag
• Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to the part number
• Polarity: Cathode Indicated by Polarity Band
• Marking: B1100
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