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MJ11012 Datasheet PDF

Part Series:MJ11012 Series
Category:BJTs
Description:TO-204-2 NPN 60V 30A
Document:MJ11012G Datasheet PDF (5 Pages)

MJ11012 BJTs Datasheet PDF

MJ11012 - ON Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-204-2
Polarity
NPN
Power Dissipation
200 W
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MJ11012 - ON Semiconductor Function Overview

MJ11015 (PNP)
MJ11012, MJ11016 (NPN)
30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60 −120 VOLTS, 200 WATTS
. . . for use as output devices in complementary general purpose amplifier applications.
•High DC Current Gain hFE= 1000 (Min) @ IC −20 Adc
•Monolithic Construction with Built−in Base Emitter Shunt Resistor
•Junction Temperature to +200C
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