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S29GL256 Datasheet PDF

Part Series:S29GL256 Series
Category:Flash Memory
Description:NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 56Pin TSOP Tray
Document:S29GL256P11TFI010 Datasheet PDF (108 Pages)

S29GL256 Flash Memory Datasheet PDF

S29GL256 Datasheet PDF Flash Memory

108 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 100ns 56Pin TSOP Tray
108 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 56Pin TSOP Tray
108 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 16M x 16Bit 90ns 56Pin TSOP Tray
108 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
84 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 100ns 56Pin TSOP Tray
84 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
84 Pages
Spansion
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
84 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
84 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 100ns 64Pin Fortified BGA Tray
82 Pages
Spansion
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 56Pin TSOP Tray
82 Pages
Spansion
SPANSION S29GL256P10TFI010 Flash Memory, NOR, 256Mbit, 32M x 8Bit / 16M x 16Bit, Parallel, TSOP, 56Pins
82 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 100ns 64Pin Fortified BGA Tray
82 Pages
Spansion
SPANSION S29GL256P11FFIV10 Flash Memory, NOR, 256Mbit, 32M x 8Bit, Parallel, FBGA, 64Pins
82 Pages
Cypress Semiconductor
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8Bit/16Bit 110ns 64Pin Fortified BGA Tray
82 Pages
Spansion
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 100ns 64Pin Fortified BGA Tray
82 Pages
Spansion
NOR Flash Parallel 3V/3.3V 256M-bit 32M x 8/16M x 16 110ns 64Pin Fortified BGA Tray

S29GL256P11TFI010 - Cypress Semiconductor Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
56 Pin
Case/Package
TSOP-56
Supply Current
110 mA
Number of Positions
56 Position
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S29GL256P11TFI010 - Cypress Semiconductor Function Overview

The S29GL256P11TFI010 is a 256MB page mode Flash Memory fabricated on 90nm MirrorBit® Process technology. This device offers a fast page access time of 110ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for todays eMBedded applications that require higher density, better performance and lower power consumption.
Highest address sector protected
Versatile I/O™ control
Secured silicon sector region - Can be programmed and locked at the factory or by the customer
100000 Erase cycles per sector typical
20 Years data retention typical
Suspend and resume commands for program and erase operations
Write operation status bits indicate program and erase operation completion
Unlock bypass program command - Reduces programming time
Support for CFI
Persistent and password methods of advanced sector protection
WP#/ACC input - Protects first or last sector regardless of sector protection settings
Accelerates programming time for greater throughput during system production
Hardware reset input resets device
Ready/busy# output detects program or erase cycle completion
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