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SN754410NE Pinout Diagram

Part Series:SN754410NE Series
Category:FET Drivers
Description:Peripheral Driver, Line, 4Outputs, 4.5V to 36V supply, 39V/2A out, DIP-16
Document:SN754410NE Datasheet PDF (16 Pages)

SN754410NE - TI Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
16 Pin
Supply Voltage (DC)
4.50V (min)
Case/Package
PDIP-16
Number of Outputs
4 Output
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SN754410NE - TI Function Overview

The SN754410NE is a quadruple high-current half-H driver IC, designed to provide bidirectional drive currents up to 1A at voltages from 4.5 to 36V. The device is designed to drive inductive loads such as relays, solenoids, DC and bipolar stepping motors, as well as other high-current/high-voltage loads in positive-supply applications. All inputs are compatible with TTL-and low-level CMOS logic. Each output (Y) is a complete totem-pole driver with a Darlington transistor sink and a pseudo-Darlington source. Drivers are enabled in pairs with drivers 1 and 2 enabled by 1,2EN and drivers 3 and 4 enabled by 3, 4EN. When an enable input is high, the associated drivers are enabled and their outputs become active and in phase with their inputs. When the enable input is low, those drivers are disabled and their outputs are off and in a high-impedance state. With the proper data inputs, each pair of drivers form a full-H (or bridge) reversible drive suitable for solenoid or motor applications.
1A Output-Current Capability Per Driver
Designed for Positive-supply Applications
TTL- and CMOS-compatible High-impedance Diode-clamped Inputs
Separate Input-logic Supply
Thermal Shutdown
Internal ESD Protection
Input Hysteresis Improves Noise Immunity
3-state Outputs
Minimized Power Dissipation
Sink/Source Interlock Circuitry Prevents Simultaneous Conduction
No Output Glitch During Power Up or Power Down
Improved Functional Replacement for the SGS L293
Device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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