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SST39SF040 Datasheet PDF

Part Series:SST39SF040 Series
Category:Flash Memory
Description:Flash Parallel 5V 4Mbit 512K x 8Bit 70ns 32Pin PLCC
Document:SST39SF040-70-4I-NHE Datasheet PDF (36 Pages)

SST39SF040 Datasheet PDF Flash Memory

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SST39SF040-70-4C-NHE - Microchip Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
32 Pin
Supply Voltage (DC)
4.50V (min)
Operating Voltage
4.5V ~ 5.5V
Case/Package
PLCC-32
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SST39SF040-70-4C-NHE - Microchip Function Overview

The SST39SF040-70-4C-NHE is a 4MB multi-purpose Flash Device with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST39SF040 write (program or erase) with a 4.5 to 5.5V power supply and conforms to JEDEC standard pinouts for x8 memories. The SST39SF040 device provide a maximum Byte-Program time of 20µs. This device use toggle bit or data# polling to indicate the completion of program operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. The SST39SF040 device is suited for applications that require convenient and economical updating of program, configuration or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption.
Superior reliability - 100000 cycles (typical) endurance and greater than 100-year data retention
Low power consumption
Sector-erase capability - Uniform 4kB sectors
Latched address and data
Automatic write timing - Internal VPP generation
Fast erase and byte-program
End-of-write detection
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