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TLC2201 Datasheet PDF

Part Series:TLC2201 Series
Description:Advanced LinCMOS™ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS
Document:TLC2201ACDR Datasheet PDF (70 Pages)

TLC2201 Datasheet PDF

70 Pages
TI
TEXAS INSTRUMENTS TLC2201AID Operational Amplifier, Single, 1 Amplifier, 1.9MHz, 2.7V/µs, ± 2.3V to ± 8V, SOIC, 8Pins
70 Pages
TI
Op Amp Single GP R-R O/P ±8V/16V 8Pin CDIP Tube
70 Pages
TI
TEXAS INSTRUMENTS TLC2201CP Operational Amplifier, Single, 1 Amplifier, 1.8MHz, 2.7V/µs, ± 2.3V to ± 8V, DIP, 8Pins
70 Pages
TI
OP Amp Single GP R-R O/P ±8V/16V 8Pin SOIC T/R
70 Pages
TI
TEXAS INSTRUMENTS TLC2201IP Operational Amplifier, Single, 1 Amplifier, 1.9MHz, 2.7V/µs, ± 2.3V to ± 8V, DIP, 8Pins
70 Pages
TI
TEXAS INSTRUMENTS TLC2201ID Operational Amplifier, Single, 1 Amplifier, 1.9MHz, 2.7V/µs, ± 2.3V to ± 8V, SOIC, 8Pins
70 Pages
TI
Op Amp Single GP R-R O/P ±8V/16V 8Pin SOIC T/R
70 Pages
TI
OP Amp Single GP R-R O/P ±8V/16V 8Pin CDIP Tube
70 Pages
TI
OP Amp Single GP R-R O/P ±8V/16V 8Pin SOIC T/R
70 Pages
TI
Operational Amplifier, Single, 1 Amplifier, 1.9MHz, 2.7V/µs, ± 2.3V to ± 8V, SOIC, 8Pins
70 Pages
TI
Op Amp Single GP R-R O/P ±8V/16V 8Pin SOIC T/R
70 Pages
TI
Op Amp Single GP R-R O/P ±8V/16V 8Pin SOIC T/R
70 Pages
TI
OP Amp Single GP R-R O/P ±8V/16V 20Pin CLLCC Tube
70 Pages
TI
Operational Amplifier, Single, 1 Amplifier, 1.8MHz, 2.5V/µs, ± 2.3V to ± 8V, SOIC, 8Pins
70 Pages
TI
TEXAS INSTRUMENTS TLC2201CDG4 Operational Amplifier, Single, 1 Amplifier, 1.9MHz, 2.7V/µs, ± 2.3V to ± 8V, SOIC, 8Pins
70 Pages
TI
Advanced LinCMOS™ LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS

TLC2201 - TI Specifications

TYPE
DESCRIPTION
Case/Package
PDIP-8
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TLC2201 - TI Function Overview

The TLC220x, TLC220xA, TLC220xB, and TLC220xY are precision, low-noise operational amplifiers using Texas Instruments Advanced LinCMOS™ process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS™ process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The combination of excellent DC and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply configurations.
The device inputs and outputs are designed to withstand –100-mA surge currents without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD may result in degradation of the parametric performance.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to 125°C.
B Grade Is 100% Tested for Noise
30 nV/Hz Max at f = 10 Hz
12 nV/Hz Max at f = 1 kHz
Low Input Offset Voltage . . . 500 µV Max
Excellent Offset Voltage Stability With Temperature . . . 0.5 µV/°C Typ
Rail-to-Rail Output Swing
Low Input Bias Current
1 pA Typ at TA = 25°C
Common-Mode Input Voltage Range Includes the Negative Rail
Fully Specified For Both Single-Supply and Split-Supply Operation
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.
All other trademarks are the property of their respective owners.
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