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TPS28225 Datasheet PDF

Part Series:TPS28225 Series
Description:8Pin High Frequency 4A Sink Synchronous MOSFET Driver
Document:TPS28225DR Datasheet PDF (38 Pages)

TPS28225 Datasheet PDF

38 Pages
TI
Automotive 4.5V to 8V, 4A Synchronous MOSFET Driver 8-SON -40 to 105
38 Pages
TI
MOSFET DRVR 4A 2Out Hi/Lo Side Inv/Non-Inv 8Pin SOIC T/R
38 Pages
TI
8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SOIC -40℃ to 125℃
38 Pages
TI
8Pin High Frequency 4A Sink Synchronous MOSFET Driver
38 Pages
TI
8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SON -40℃ to 125℃
38 Pages
TI
8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SON -40℃ to 125℃
38 Pages
TI
8Pin High Frequency 4A Sink Synchronous MOSFET Driver 8-SOIC -40℃ to 125℃

TPS28225 - TI Specifications

TYPE
DESCRIPTION
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Outputs
2 Output
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TPS28225 - TI Function Overview

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
Wide Power System Train Input Voltage: 3 V Up to 27 V
Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
Capable to Drive MOSFETs with ≥40-A Current per Phase
High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
Capable to Propagate <30-ns Input PWM Pulses
Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
3-State PWM Input for Power Stage Shutdown
Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
Thermal Shutdown
UVLO Protection
Internal Bootstrap Diode
Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
High Performance Replacement for Popular 3-State Input Drivers
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