| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
| Drain to Source Voltage (Vds) | 650 V |
DESCRIPTION
●The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored.
●FEATURES
● RDS(ON) = 0.85Ω @VGS = 10 V
● Ultra low gate charge ( typical 42 nC )
● Low reverse transfer capacitance ( CRSS = typical 25 pF )
● Fast switching capability
● Avalanche energy specified
● Improved dv/dt capability, high ruggedness
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