| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-220 |
| Drain to Source Voltage (Vds) | 100 V |
DESCRIPTION
●The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse. They are suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
●FEATURES
● RDS(ON)= 0.1Ω @VGS= 10 V
● Ultra low gate charge ( typical 19nC )
● Low reverse transfer Capacitance ( CRSS= typical 32pF )
● Fast switching capability
● Avalanche energy Specified
● Improved dv/dt capability, high ruggedness
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