| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 70.0 V |
| Current Rating | 15 mA |
| Capacitance | 2.00 pF |
| Case/Package | DO-35 |
| Output Current | 15 mA |
| Breakdown Voltage | 70 V |
| Load Current | 15 mA |
| Number of Positions | 2 Position |
| Forward Voltage | 1 V |
| Polarity | Standard |
| Power Dissipation | 430 mW |
| Forward Current | 15 mA |
| Maximum Forward Voltage (Max) | 410 mV |
| Forward Current (Max) | 15 mA |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 430 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.5 mm |
| Size-Width | 2 mm |
| Size-Height | 2 mm |
| Weight | 0.004535924 kg |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
The 1N5711 is a metal to silicon small signal Schottky Diode, primarily intended for high level UHF/VHF detection and pulse application with broad dynamic range.
● High Breakdown
● Low Turn-on Voltage
● Ultrafast Switching
ST Microelectronics
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