| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 1.00 A |
| Case/Package | DO-41 |
| Halogen Free Status | Halogen Free |
| Output Current | ≤1.00 A |
| Number of Positions | 2 Position |
| Forward Voltage | 550mV @1A |
| Polarity | Standard |
| Thermal Resistance | 80℃/W (RθJA) |
| Forward Current | 1 A |
| Max Forward Surge Current (Ifsm) | 25 A |
| Maximum Forward Voltage (Max) | 550 mV |
| Forward Current (Max) | 1 A |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Junction Temperature (Max) | 125 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 5.2 mm |
| Size-Height | 5.2 mm |
| Operating Temperature | -65℃ ~ 125℃ |
The 1N5818G is an axial-lead Schottky Rectifier with epoxy moulded case. This series employs the Schottky barrier principle in a large area metal-to-silicon power diode. The state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free-wheeling diodes and polarity protection diodes.
● Cathode indicated by polarity band
● Extremely low VF
● Low stored charge, majority carrier conduction
● Low-power loss/high-efficiency
● All external surfaces corrosion-resistant
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