1N60 Datasheet PDF - UTC

DESCRIPTION

●The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

●FEATURES

● RDS(ON) =9.3Ω@VGS= 10V.

● Ultra Low gate charge (typical 5.0nC)

● Low reverse transfer capacitance (CRSS= typical 3.0 pF)

● Fast switching capability

● Avalanche energy specified

● Improved dv/dt capability, high ruggedness