| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 18 Pin |
| Supply Voltage (DC) | 14.0V (min) |
| Case/Package | PG-DSO-18 |
| Number of Outputs | 2 Output |
| Output Voltage | 14.18 V |
| Output Current | 1 A |
| Number of Channels | 1 Channel |
| Number of Positions | 18 Position |
| Rise Time | 20 ns |
| Fall Time (Max) | 35 ns |
| Fall Time (Max) | 40 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Supply Voltage | 14.18 V |
| Supply Voltage (Max) | 18 V |
| Supply Voltage (Min) | 14 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Cut Tape (CT) |
| Size-Length | 12.8 mm |
| Size-Width | 7.6 mm |
| Size-Height | 2.45 mm |
| Operating Temperature | -40℃ ~ 125℃ |
The 2ED020I12-FI is a 2-channel high voltage high speed power MOSPET and IGBT Driver with CT technology and interlocking high and low-side referenced outputs. The floating high-side driver may be supplied directly or by means of a bootstrap diode and capacitor. In addition to the logic input of each driver is equipped with a dedicated shutdown input. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. This driver is designed to drive an N-channel power IGBT which operate up to 1.2kV.
● Matched propagation delay
● High DV/DT immunity
● Low power consumption
● Floating high side driver
● Under-voltage lockout
● 3.3 and 5V TTL compatible inputs
● CMOS Schmitt-triggered inputs with pull-down
● Non-inverting inputs
● Interlocking inputs
● Dedicated shutdown input with pull-up
Infineon
22 Pages / 0.66 MByte
Infineon
138 Pages / 12.05 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
17 Pages / 0.71 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Infineon 2ED020I12-FI, Dual MOSFET Power Driver, -1A Half Bridge, 14 → 18V, 18Pin SOIC
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Inv/Non-Inv 18Pin DSO T/R
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Inv/Non-Inv 36Pin DSO T/R
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Inv/Non-Inv 32Pin DSO T/R
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Half Brdg Non-Inv 18Pin DSO
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Inv/Non-Inv 36Pin DSO T/R
Infineon
MOSFET DRVR 2A 2Out Hi/Lo Side Inv/Non-Inv 32Pin DSO T/R
Infineon
The 2ED020I12FA is a galvanic isolated dual channel IGBT driver in PG-DSO-36 package that provides two fully independent driver outputs with a current capability of typically 2A. All logic pins are 5V CMOS compatible and could be directly connected to a microcontroller. The data transfer across galvanic isolation is realized by the integrated Coreless Transformer Technology. The 2ED020I12FA provides several protection features like IGBT desaturation protection, active Miller clamping and active shut down.
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