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2N1711
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2N1711 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:BJTs
Case Package:TO-5-3
Description:Trans GP BJT NPN 50V 0.5A 3Pin TO-39 Bag
Documentation:2N1711 Datasheet (4 Pages)
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2N1711 Datasheet PDF (4 Pages)
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2N1711 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency70 MHz
Number of Pins3 Pin
Voltage Rating (DC)75.0 V
Current Rating500 mA
Case/PackageTO-5-3
PolarityNPN
Power Dissipation0.8 W
Breakdown Voltage (Collector to Base)75.0 V
Breakdown Voltage (Collector to Emitter)50 V
hFE Min35 @100mA, 10V
hFE Max100
Input Power (Max)800 mW
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-65 ℃
Power Dissipation (Max)800 mW
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2N1711 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusNot Recommended for New Designs
PackagingTube
MaterialSilicon
Size-Length9.4 mm
Size-Width9.4 mm
Size-Height1.5 mm
Operating Temperature175℃ (TJ)
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2N1711 Documents

2N1711 Datasheet
ST Microelectronics
4 Pages / 0.04 MByte
2N1711 Other References
ST Microelectronics
1 Pages / 0.16 MByte
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