| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 120 V |
| Current Rating | 500 mA |
| Case/Package | TO-5-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 800 mW |
| Gain Bandwidth Product | 70 MHz |
| Breakdown Voltage (Collector to Base) | 120 V |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 40 @150mA, 10V |
| hFE Max | 120 |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 80 |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 9.4 mm |
| Size-Width | 9.4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | 175℃ (TJ) |
DESCRIPTION
●The 2N1893 is a Silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for use in high-performance amplifier, oscillator and switching circuits. It provides greater voltage swings in oscillator and amplifier circuits and more protection in inductive switching circuits due to its 120 V collector-to-base voltage rating.
●■ GENERAL PURPOSE HIGH VOLTAGE DEVICE
ST Microelectronics
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