| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 800 mW |
| Breakdown Voltage (Collector to Emitter) | 40.0 V |
| DC Current Gain (hFE) | 20 |
| Operating Temperature (Max) | 200 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The 2N2218A is a 40V NPN silicon Bipolar Transistor intended for high speed switching applications.
● 75V Collector to base voltage (VCBO)
● 6V Emitter to base voltage (VEBO)
● 60ns Fall time (VCC = 30V, IC = 150mA)
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