| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 75.0 V |
| Current Rating | 600 mA |
| Case/Package | TO-39 |
| Power Rating | 800 mW |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 800 mW |
| Breakdown Voltage (Collector to Base) | 75.0 V |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 175℃ |
The 2N2219A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
● Collector to emitter voltage (Vce) is 40V
● Collector current (Ic) is 0.6A
● Power dissipation (Pd) is 3W
● Collector to emitter saturation voltage of 1V at 500mA collector current
● DC current gain (hFE) of 35 at 0.1mA collector current
● Operating junction temperature range from 175°C
ST Microelectronics
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