TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-5-3 |
Power Dissipation | 800 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
hFE Min | 100 @150mA, 10V |
hFE Max | 325 |
Input Power (Max) | 800 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 800 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tray |
Material | Silicon |
Operating Temperature | -55℃ ~ 200℃ (TJ) |
NPN SWITCHING SILICON TRANSISTOR
●Qualified per MIL-PRF-19500/251
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