2N2222 Datasheet PDF - ST Microelectronics

Manufacturer:	ST Microelectronics
Category:	BJTs
Case Package:	TO-18
Description:	Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Documentation:	2N2222 Datasheet (5 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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2N2222 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Voltage Rating (DC)	30.0 V
Current Rating	800 mA
Case/Package	TO-18
Polarity	NPN
Power Dissipation	500 mW
Breakdown Voltage (Collector to Base)	60.0 V (min)
Breakdown Voltage (Collector to Emitter)	30 V
hFE Min	100 @150mA, 10V
Input Power (Max)	500 mW
DC Current Gain (hFE)	100
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	500 mW