TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 30.0 V |
hFE Min | 100 |
DC Current Gain (hFE) | 100 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
The 2N2222 from Multicomp is a through hole, silicon planar NPN low power bipolar transistors in TO-18 metal can package. This transistor is used for switching, linear DC power supply and VHF amplifier applications.
● Collector emitter voltage (Vce) of 30V
● Continuous collector current (Ic) of 800mA
● Power dissipation of 500mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage of 1.6V at 500mA collector current
● DC current gain 30 at Ic=500mA
● Collector emitter breakdown voltage 30V
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