| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Power Dissipation | 1.2 W |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 200 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
Bipolar (BJT) Transistor Array 40V 800mA 1.2W Through Hole TO-18
Solid State
3 Pages / 0.13 MByte
Solid State
10 Pages / 0.36 MByte
Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
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Fairchild
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0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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