| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 250 MHz |
| Number of Pins | 3 Pin |
| Case/Package | TO-92 |
| Power Dissipation | 625 mW |
| Gain Bandwidth Product | 250 MHz |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 625 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Ammo Pack |
| Material | Silicon |
Diotec Semiconductor
2 Pages / 0.1 MByte
Diotec Semiconductor
2 Pages / 0.1 MByte
Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
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Philips
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0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
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