TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 300 MHz |
Number of Pins | 3 Pin |
Case/Package | TO-18-3 |
Power Dissipation | 400 mW |
Gain Bandwidth Product | 300 MHz |
Breakdown Voltage (Collector to Emitter) | 40 V |
hFE Min | 100 @150mA, 10V |
Input Power (Max) | 500 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Size-Length | 5.84 mm |
Size-Width | 5.84 mm |
Size-Height | 5.33 mm |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
Central Semiconductor
5 Pages / 0.37 MByte
Central Semiconductor
10 Pages / 0.36 MByte
Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
TO-18 Metal Can TransistorsP
Fairchild
Transistor NPN 2N2222 TUNGSRAM miliampere=800V=30 TO18
Philips
NPN switching transistors
Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.