TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 75.0 V |
Current Rating | 600 mA |
Case/Package | TO-18-3 |
Power Rating | 500 mW |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Base) | 75.0 V |
Breakdown Voltage (Collector to Emitter) | 40 V |
hFE Min | 100 @150mA, 10V |
hFE Max | 300 |
Input Power (Max) | 500 mW |
DC Current Gain (hFE) | 300 |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Bulk |
Material | Silicon |
Size-Length | 5.8 mm |
Size-Width | 5.8 mm |
Size-Height | 1.5 mm |
Operating Temperature | 175℃ (TJ) |
The 2N2222A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-18 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
● Collector to emitter voltage (Vce) is 40V
● Collector current (Ic) is 0.6A
● Power dissipation (Pd) is 1.8W
● Collector to emitter saturation voltage of 1V at 500mA collector current
● DC current gain (hFE) of 35 at 0.1mA collector current
● Operating junction temperature range from 175°C
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