TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 1.2 W |
Breakdown Voltage (Collector to Emitter) | 40.0 V |
DC Current Gain (hFE) | 30 |
Operating Temperature (Max) | 200 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
The 2N2222A from Multicomp is a through hole, silicon planar NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. This transistor is used for switching, linear DC power supply and VHF amplifier applications.
● Collector emitter voltage (Vce) of 40V
● Continuous collector current (Ic) of 800mA
● Power dissipation of 500mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage of 1V at 500mA collector current
● DC current gain is greater than 35 at Ic=0.1 mA
Multicomp
5 Pages / 0.37 MByte
Multicomp
10 Pages / 0.36 MByte
Multicomp
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
Central Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18 Box
ST Microelectronics
Bipolar (BJT) Single Transistor, NPN, 30V, 250MHz, 0.5W(1/2W), 800mA, 100 hFE
ON Semiconductor
Trans GP BJT NPN 30V 0.8A 3Pin TO-18
National Semiconductor
General Purpose Applications, 60V, 600mA, 330mW, B= 100~300, > 250MHz
Micro Commercial Components
TO-18 Metal Can TransistorsP
Fairchild
Transistor NPN 2N2222 TUNGSRAM miliampere=800V=30 TO18
Philips
NPN switching transistors
Continental Device
0.5W(1/2W) General Purpose NPN Metal Can Transistor. 30V Vceo, 0.8A Ic, 30 hFE.
Semicoa Semiconductor
Chip: geometry 0400; polarity NPN
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.