| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 360 mW |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 200 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
● Collector emitter voltage (Vce) of 15V
● Continuous collector current (Ic) of 200mA
● Power dissipation of 360mW
● Operating junction temperature range from -65°C to 200°C
● Collector emitter saturation voltage is less than 250mV at Ic=10mA
● DC current gain is greater than 20 at Ic=100mA
Multicomp
4 Pages / 0.25 MByte
Multicomp
4 Pages / 0.25 MByte
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