| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Power Dissipation | 0.36 W |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 20 @100mA, 1V |
| Input Power (Max) | 360 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 360 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Use this versatile NPN 2N2369A GP BJT from Microsemi to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Microsemi
2 Pages / 0.04 MByte
Microsemi
2 Pages / 0.06 MByte
Multicomp
Bipolar (BJT) Single Transistor, Switching, NPN, 15V, 500MHz, 360mW, 200mA, 40 hFE
CDIL
Transistor: NPN; bipolar; 15V; 200mA; 0.36/1.2W; TO18
Continental Device
1.2W General Purpose NPN Metal Can Transistor. 15V Vceo, A Ic, 40 - 120 hFE.
Central Semiconductor
NPN METAL CAN - SATURATED SWITCH
Microsemi
Trans GP BJT NPN 15V 360mW 3Pin TO-18
Central Semiconductor
2N Series 15V 200mA NPN Through Hole Silicon Transistor - TO-18
Multicomp
MULTICOMP 2N2369A Bipolar (BJT) Single Transistor, NPN, 15V, 500MHz, 360mW, 200mA, 40
Semelab
Trans GP BJT NPN 15V 0.2A 3Pin CLLCC-1
ST Microelectronics
Trans GP BJT NPN 15V 0.2A 3Pin TO-18
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
