TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-18 |
Number of Positions | 3 Position |
Polarity | NPN |
Power Dissipation | 360 mW |
Breakdown Voltage (Collector to Emitter) | 15.0 V |
hFE Min | 40 |
DC Current Gain (hFE) | 40 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Operating Temperature | -65℃ ~ 200℃ |
The 2N2369A is a 15V Silicon NPN Planar Epitaxial Transistor designed for low power and high speed switching applications.
● Fast switching
● Short turn-off
● Low saturation voltage
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