| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-39-3 |
| Power Dissipation | 600 mW |
| Gain Bandwidth Product | 200 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 40 @10mA, 10V |
| Input Power (Max) | 600 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Size-Length | 9.4 mm |
| Size-Width | 9.4 mm |
| Size-Height | 6.6 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Central Semiconductor
1 Pages / 0.06 MByte
Central Semiconductor
3 Pages / 0.32 MByte
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