| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-5 |
| Power Dissipation | 0.6 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 800 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Jump-start your electronic circuit design with this versatile PNP 2N2905AL GP BJT from Microsemi. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
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