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2N2907A
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2N2907A Datasheet PDF - Central Semiconductor

Manufacturer:Central Semiconductor
Category:BJTs
Case Package:TO-18
Description:2N Series 60V 600mA PNP Through Hole Silicon Transistor - TO-18
Documentation:2N2907A Datasheet (13 Pages)Package Outline Dimension on8 Page9 Page10 Page11 Page
Package Footprint Pad Layout on10 Page
Part Numbering System on2 Page13 Page
Pictures:
Symbol
Footprint
Pinout
Product Pictures
2N2907A Datasheet PDF (13 Pages)
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2N2907A Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Frequency200 MHz
Number of Pins3 Pin
Case/PackageTO-18
Power Dissipation400 mW
Breakdown Voltage (Collector to Emitter)60 V
hFE Min100 @150mA, 10V
Input Power (Max)400 mW
Power Dissipation (Max)400 mW
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2N2907A Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingBulk
Size-Width5.84 mm
Operating Temperature-65℃ ~ 200℃ (TJ)
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2N2907A Documents

2N2907A Datasheet
Central Semiconductor
13 Pages / 0.41 MByte
2N2907A Other Datasheet PDF
Central Semiconductor
5 Pages / 0.06 MByte
2N2907A Drawing Diagrams
Central Semiconductor
2 Pages / 0.16 MByte

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