| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 200 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -600 mA |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 400 mW |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 400 mW |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | 175℃ (TJ) |
DESCRIPTION
●The 2N2905A and 2N2907A are silicon Planar Epitaxial PNP transistors in Jedec TO-39 (for 2N2905A) and in Jedec TO-18 (for 2N2907A) metal case. They are designed for high speed saturated switching and general purpose applications.
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