| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | CLCC-4 |
| Power Dissipation | 0.4 W |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @1mA, 10V |
| hFE Max | 450 |
| Input Power (Max) | 400 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Material | Silicon |
| Size-Length | 5.72 mm |
| Size-Height | 1.91 mm |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
The versatility of this PNP 2N2907AUA GP BJT from Optek Technology (TT electronics) makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 400 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
TT Electronics/Optek Technology
3 Pages / 0.31 MByte
TT Electronics/Optek Technology
3 Pages / 0.23 MByte
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