| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-18-3 |
| Power Dissipation | 0.5 W |
| Input Capacitance | 30 pF |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 100 @150mA, 10V |
| hFE Max | 450 |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
The PNP 2N2907AUB general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.
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