| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 100 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 140 V |
| Current Rating | 1.00 A |
| Case/Package | TO-5-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 5 W |
| Gain Bandwidth Product | 100 MHz |
| Breakdown Voltage (Collector to Base) | 140 V |
| Breakdown Voltage (Collector to Emitter) | 80 V |
| hFE Min | 100 @150mA, 10V |
| hFE Max | 300 |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 65 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Material | Silicon |
| Size-Length | 9.4 mm |
| Size-Width | 9.4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | 175℃ (TJ) |
DESCRIPTION
●The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.
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