| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-39 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 60.0 V |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 200 ℃ |
The 2N3053A is a NPN silicon Bipolar Transistor designed primarily for amplifier and switching applications. The device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.
● -65 to 150°C Operating junction temperature range
Multicomp
1 Pages / 0.38 MByte
Multicomp
2 Pages / 0.2 MByte
Central Semiconductor
2N Series 40V 700mA NPN Through Hole Silicon Transistor - TO-39
Multicomp
MULTICOMP 2N3053 Bipolar (BJT) Single Transistor, NPN, 40V, 100MHz, 800mW, 700mA, 50 hFE
CDIL
Transistor: NPN; bipolar; 40V; 700mA; 5W; TO39
SPC
Bipolar Transistor; Transistor Polarity: N Channel; Power Dissipation, Pd: 800mW; Package/Case: TO-39; C-E Breakdown ...
Microsemi
2N3053 -- Local Stock w/CERTS
Microchip
Trans GP BJT NPN 40V 0.7A 3-Pin TO-5
Advanced Semiconductor
Small Signal Bipolar Transistor, 0.7A I(C), 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
GE
Small Signal Bipolar Transistor
ST Microelectronics
700mA, 40V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
