| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 15.0 A |
| Case/Package | TO-204-2 |
| Polarity | NPN |
| Power Dissipation | 115000 mW |
| Breakdown Voltage (Collector to Emitter) | 60.0 V |
| Continuous Collector Current | 15A |
| hFE Min | 20 |
| hFE Max | 70 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.37 mm |
| Size-Width | 26.67 mm |
| Size-Height | 8.51 mm |
| Minimum Packing Quantity | 100 |
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.
●Features
●---
● |
● DC Current Gain - hFE = 20-70 @ IC = 4 Adc
● Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
● Excellent Safe Operating Area
● Pb-Free Packages are Available
ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
1 Pages / 0.03 MByte
ON Semiconductor
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