| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 1 MHz |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 15.0 A |
| Case/Package | TO-3 |
| Power Rating | 115 W |
| Number of Positions | 2 Position |
| Polarity | NPN |
| Power Dissipation | 115 W |
| Breakdown Voltage (Collector to Base) | 100 V |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 20 @4A, 4V |
| hFE Max | 70 |
| Input Power (Max) | 115 W |
| DC Current Gain (hFE) | 70 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 115000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tray |
| Material | Silicon |
| Size-Length | 39.5 mm |
| Size-Width | 26.2 mm |
| Size-Height | 8.7 mm |
| Operating Temperature | -65℃ ~ 200℃ |
The 2N3055 from STMicroelectronics is a through hole complementary power transistor in TO-3 package. This device manufactured in planar technology with "base island" layout and suitable for power linear and switching applications.
● Collector to emitter voltage (Vce) is 70V at 100 ohm RBE
● Collector current (Ic) is 15A
● Power dissipation (Pd) is 115W
● Collector to emitter saturation voltage of 3V at 10A collector current
● DC current gain (hFE) of 5 at 10A collector current
● Operating junction temperature range from 200°C
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