| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 15 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 450 V |
| Current Rating | 1.00 A |
| Case/Package | TO-39 |
| Power Rating | 1 W |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Base) | 450 V |
| Breakdown Voltage (Collector to Emitter) | 350 V |
| hFE Min | 40 @20mA, 10V |
| Input Power (Max) | 1 W |
| DC Current Gain (hFE) | 40 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 10000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Material | Silicon |
| Operating Temperature | 200℃ (TJ) |
Bipolar (BJT) Transistor NPN 350 V 1 A 15MHz 1 W Through Hole TO-39
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
4 Pages / 0.04 MByte
ST Microelectronics
1 Pages / 0.1 MByte
ST Microelectronics
1 Pages / 0.16 MByte
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