| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-205 |
| Power Dissipation | 1 W |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 1 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 1000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
Implement this versatile NPN 2N3501 GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.
Microsemi
7 Pages / 0.7 MByte
Microsemi
2 Pages / 0.05 MByte
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