| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SMD-3 |
| Power Dissipation | 0.5 W |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| hFE Min | 100 @150mA, 10V |
| Input Power (Max) | 500 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 200℃ (TJ) |
This 2N3501 epitaxial planar transistor is military qualified up to a JANS level for high-reliability applications. This device is also available in thru hole TO-5 and TO-39 packaging as well as a low profile U4 surface mount. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.
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