TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 4 Pin |
Case/Package | SMD-3 |
Power Dissipation | 500 mW |
Breakdown Voltage (Collector to Emitter) | 80 V |
hFE Min | 50 @500mA, 10V |
Input Power (Max) | 500 mW |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | 65 ℃ |
Power Dissipation (Max) | 500 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Material | Silicon |
Operating Temperature | -65℃ ~ 200℃ (TJ) |
This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability applications.
Microsemi
7 Pages / 0.42 MByte
Microsemi
6 Pages / 0.15 MByte
ST Microelectronics
Trans GP BJT NPN 80V 1A 0.5W(1/2W) 3Pin TO-18 Bag
Multicomp
MULTICOMP 2N3700 Bipolar (BJT) Single Transistor, NPN, 80V, 400MHz, 0.5W(1/2W), 1A, 300 hFE
Microsemi
Trans GP BJT NPN 80V 1A 3Pin TO-18
Solid State
Transistor; Bipolar; NPN; 80V; TO-18
Microchip
Trans GP BJT NPN 80V 1A 500mW 3-Pin TO-18 Bag
CDIL
Transistor: NPN; bipolar; 80V; 1A; 0.5/1.8W; TO18; 4dB
Central Semiconductor
2N3700 Series NPN 80V 1A General Purpose Amplifier Through Hole - TO-18
Semicoa Semiconductor
Chip Type 2C3019 Geometry 4500 Polarity PNP
Semelab
Trans GP BJT NPN 80V 1A 3Pin TO-18
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.