TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 40.0 V |
Current Rating | 30.0 A |
Case/Package | TO-3 |
Polarity | NPN |
Power Dissipation | 150 W |
Breakdown Voltage (Collector to Emitter) | 40.0 V |
Continuous Collector Current | 30A |
hFE Min | 15 |
hFE Max | 60 |
Operating Temperature (Max) | 200 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 150000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tray |
Material | Silicon |
Minimum Packing Quantity | 100 |
The 20 A, 60 V NPN Bipolar Power Transistor is designed for linear amplifiers, series pass regulators and inductive switching applications.
●Features
●---
● |
● Forward Biased Second Breakdown Current Capability
●IS/b = 3.75 Adc @ VCE = 40 Vdc - 2N3771
●IS/b = 2.5 Adc @ VCE = 60 Vdc - 2N3772
● Pb-Free Packages are Available
ON Semiconductor
5 Pages / 0.08 MByte
ON Semiconductor
8 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.03 MByte
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