TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -100 mA |
Case/Package | TO-226-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 600 mW |
Rise Time | 35 ns |
Breakdown Voltage (Collector to Emitter) | 40 V |
hFE Min | 100 @10mA, 1V |
Input Power (Max) | 600 mW |
DC Current Gain (hFE) | 30 |
Fall Time | 75 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 600 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT), Tape & Box (TB) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Compared to other transistors, the PNP 2N3906-AP general purpose bipolar junction transistor, developed by Micro Commercial Components, can offer a high-voltage solution in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 600 mW. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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