TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 250 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -40.0 V |
Current Rating | -200 mA |
Case/Package | TO-92-3 |
Polarity | PNP, P-Channel |
Power Dissipation | 250 mW |
Breakdown Voltage (Collector to Emitter) | 40 V |
Thermal Resistance | 83.3℃/W (RθJC) |
Continuous Collector Current | 0.2A |
hFE Min | 100 @10mA, 1V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The PNP Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.
●Features
●---
● |
● Pb-Free Package is Available
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