TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 200 mA |
Case/Package | TO-226-3 |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 250 MHz |
Breakdown Voltage (Collector to Emitter) | 30 V |
hFE Min | 50 @2mA, 1V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Box |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 30V 200mA 250MHz 625mW Through Hole TO-92-3
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