TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 25.0 V |
Current Rating | 200 mA |
Case/Package | TO-92-3 |
Polarity | NPN |
Power Dissipation | 625 mW |
Gain Bandwidth Product | 300 MHz |
Breakdown Voltage (Collector to Emitter) | 25 V |
Continuous Collector Current | 0.2A |
hFE Min | 120 |
hFE Max | 360 |
Input Power (Max) | 625 mW |
DC Current Gain (hFE) | 60 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 25V 200mA 300MHz 625mW Through Hole TO-92-3
Fairchild
7 Pages / 0.09 MByte
Fairchild
134 Pages / 0.15 MByte
Central Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92 Box
ON Semiconductor
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
Fairchild
Trans GP BJT NPN 25V 0.2A 3Pin TO-92
NXP
TRANSISTOR 200 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43, 3 PIN, BIP General Purpose Small Signal
Vishay Semiconductor
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-226AA, PLASTIC, TO-92, 3 PIN
Motorola
200mA, 25V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
Samsung
NPN EPITAXIAL SILICON TRANSISTOR
ST Microelectronics
TRANSISTOR,BJT,NPN,25V V(BR)CEO,200MA I(C),TO-92
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.